Pyro 400：直接读取GaN和SiC温度
在基于GaN的LED生产过程中仍存在一个造成困扰的问题，即无法测量和控制蓝宝石或SiC外延生长过程中，GaN表面的真实温度。雷泰提供的Pyro400可解决这一问题，该系统可以精确测量位于蓝宝石和SiC上的GaN表面的真实温度，直接控制InGaN多量子阱（MQW）层的生长情况。
LayTec's latest development Pyro 400 Gen3 comes to the market with its own calibration tool: AbsouT 400. ...more
Pyro 400和EpiCurve® TT组合可为用户提供生长的所有实时参数，优化控制金属有机物化学气相沉积（MOCVD）中的LED生长情况。 ...更新信息请参阅EpiCurve® TT
所有雷泰原位系统均配备了专为制程优化、分析和控制所开发的雷泰软件。我公司的软件解决方案可在金属有机物化学气相沉积（MOCVD）工厂里控制几个系统，并同时监测所有批次，帮助操作人员根据先进制程控制（APC）的具体情况作出“终止或继续”的决定。 ...更多
Product information
Fields of application:
• GaN LED and laser diode production
• III-Nitride growth on sapphire
• SiC growth
• R&D for new materials and devices
and many others
Product features:
- Ultraviolet (UV) pyrometry for direct GaN surface temperature control
- Strict LED emission wavelength uniformity control
- Automated correction of viewport coating effects to enable long-lasting, 24/7 accuracy in HB-LED emission wavelength
- Additional infrared (IR) pyrometry for pocket temperature
- Full performance up to 1500 rpm main susceptor rotation
Product news:
- AbsoluT 400 calibration to the PTB certified wafer temperature
- Accurate wafer temperature for GaN/Si power electronics with Pyro 400
- EPISTAR qualified Pyro 400 for GaN LED production
Downloads:
In-situ product portfolio
