In-situ solutions for epitaxy: MOVPE, MBE and HVPE

MOVPE is also known as Metalorganic chemical vapor deposition (MOCVD) or Organometallic vapor phase epitaxy (OMVPE). LayTec in-situ metrology systems are available for various MOCVD growth systems such as: ###HIDE###

• Systems with combined main rotation and satellite rotation (reactors of Planetary® type)
• Showerhead-like systems
• Systems with wafer rotation speed of up to 1500 rpm
• R&D type and customized MOCVD growth systems

These products are available for MOCVD process monitoring:

• EpiTT for monitoring wafer temperature, film thickness and surface morphology
• EpiCurve® TT: includes all EpiTT features and additionally monitors wafer thermal stress and defect formation
  
• EpiRAS® TT: for III-V surface and interface analysis
• EpiR TT: for R&D of new materials and devices, for nanowire growth, VCSEL and laser growth

LayTec’s sensors are adaptable to many MBE (Molecular Beam Epitaxy) systems by Riber, Veeco, DCA and VG. Adaptation to other manufacturers’ products and custom-built systems is available on request. The following products are available for MBE process monitoring:###HIDE###

• EpiTT for monitoring wafer temperature, film thickness and surface morphology
• EpiCurve® TT: includes all EpiTT features and additionally monitors wafer thermal stress and defect formation
• EpiRAS® TT: for III-V surface and interface analysis 

HVPE (Hydride vapor phase epitaxy) is an epitaxial method for the production of compound semiconductor materials that offers a high growth rate and a controlled geometrical size. This technique is used for growing GaN substrates on GaN/sapphire templates. ###HIDE### It is well known that tight growth monitoring is indispensable during HVPE growth. For HVPE applications, LayTec offers:

• EpiTT, which monitors surface roughness, growth rate of the first 10 µm, reflectance and pyrometry at 950 nm. Please learn more about EpiTT for HVPE applications in our Application note
• EpiCurve® TT, which contains all features of EpiTT and monitors additionally the bowing. Find out more about strain engineering for HVPE GaN growth in our Newsletter

Please contact info@laytec.de for further information.