Epitaxy is a technology for growing crystalline thin films on crystalline substrates. Because epitaxy usually has to be controlled at a high level of atomic monolayers, in-situ metrology is indispensable for optimizing material quality and obtaining run-to-run reproducibility in opto-electronic and electronic applications. As a market leader in compound semiconductor epitaxial growth monitoring, LayTec provides in-situ solutions for a variety of epitaxial processes.
MOVPE is also known as Metalorganic chemical vapor deposition (MOCVD) or Organometallic vapor phase epitaxy (OMVPE). LayTec in-situ metrology systems are available for various MOCVD growth systems such as: ###HIDE###
These products are available for MOCVD process monitoring:
LayTec’s sensors are adaptable to many MBE (Molecular Beam Epitaxy) systems by Riber, Veeco, DCA and VG. Adaptation to other manufacturers’ products and custom-built systems is available on request. The following products are available for MBE process monitoring:###HIDE###
HVPE (Hydride vapor phase epitaxy) is an epitaxial method for the production of compound semiconductor materials that offers a high growth rate and a controlled geometrical size. This technique is used for growing GaN substrates on GaN/sapphire templates. ###HIDE### It is well known that tight growth monitoring is indispensable during HVPE growth. For HVPE applications, LayTec offers:
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Links to specific processes