Newsletter September 2024

• EpiNet's 'Algorithm Deep-Dive' series; Introducing EpiNet® 2024 for office; EpiX® C2C mapping station...more

Newsletter May 2024

• EpiNet's 'Algorithm Deep-Dive' series; Events; LayTec's TRIton for III-V Lab; Full 2D characterization of HEMT device structure epi-wafers...more

Newsletter February 2024

• EpiNet's 'Algorithm Deep-Dive' series; Events; Our new sales & service partner QES; Best practice for AbsoluT temperature calibration...more

Newsletter November 2023

• EpiNet's 'Algorithm Deep-Dive' series; First joint X Link® installation with all4-GP North America Inc.;
  Our new sales & service partner DAYK...more

Newsletter September 2023

• EpiNet's 'Algorithm Deep-Dive' series; Get to know our 'Connected Metrology' concept;
  Oxford Instruments Plasma Technology rolls out LayTec’s Etchpoint metrology system...more

Newsletter July 2022

• In-situ monitoring of 2D materials epitaxy during chemical vapor deposition

Newsletter June 2022

• Optimizing epitaxial layer uniformity by combining in-situ and ex-situ metrology

Newsletter May 2022

• Product Discontinuation Notification - 05/2022

Newsletter July 2021

• LayTec to supply two InspiRe systems for in-situ monitoring of perovskite formation to Helmholtz Innovation Lab HySPRINT at Helmholtz-Zentrum Berlin
• In-line thickness monitoring during R2R OLED and OPV manufacturing

Newsletter March 2021

• PearL and t-PearL – comprehensive photoluminescence characterization of compound semiconductor thin films
• Commissioning of fully integrated combined in-situ and in-line metrology system at ZSW Stuttgart

Newsletter January 2021

• A smooth transition in leadership – towards the new management board at LayTec

Newsletter April 2020

• EpiCurve® TT: AlInN composition control for III-Nitride VCSELs
• LayTec is ongoingly keeping support services on duty

Newsletter March 2020

• InspiRe – LayTec’s new in-situ monitoring tool for perovskites

Newsletter January 2020

• Major laser supplier chooses EpiTT FaceT for yield improvemen

• EpiTT: optimizing MBE growth of InP-based quantum cascade lasers

Newsletter November 2019

• Vertical cavity surface emitting lasers (VCSELs): LayTec’s new EpiTT VCSEL UV
• EpiTT VCSEL – improved in-situ prediction of VCSEL emission wavelength

Newsletter July 2019

• In-situ metrology enabling InP-based MOCVD on Si / SiO2 substrates for silicon photonics
• Short wavelength (280 nm) reflectance enables quantitative analysis of UV LED growth
• DBRs for VCSELs and SESAMs: combining in-situ and ex-situ metrology

Newsletter February 2019

• EpiX – a modular wafer mapping station for compound semiconductor research

Newsletter December 2018

• EpiTT Band Edge – for MBE of InP based VCSEL devices
• GaAs based edge-emitting high-power IR lasers – yield ramp-up by EpiTT Face

Newsletter for PV market, October 2017

• ILMetro – in-line metrology station for CdTe based thin-film PV
• In-line metrology for ARC coating on structured PV glass

Newsletter September 2017

• EpiTT VCSEL – shipments to leading VCSEL manufacturer
• In-situ metrology system shipped to GaN-on-SiC customer

Newsletter February 2017

• In-situ wafer bow measurements in multi-pocket satellite configuration 
• Optimizing quantum cascade laser (QCL) epitaxy with EpiCurve® TT

Newsletter November 2016

• LayTec’s 2000th in-situ tool delivered to Compound Semiconductor Centre
• Astronergy installed X Link® for in-line lamination control
• LayTec welcomes new members in sales and customer support teams

Newsletter for PV market, August 2016

• LayTec’s latest development LID Scope has been successfully launched on the PV market to control the effect of Light Induced Degradation in solar cells.
• REC installed X Link SAM for PV module lamination control.
• New calibration tool X Cal secures tool-to-tool and fab-to-fab accuracy of X Link for the best possible lamination control.

Newsletter July 2016

• LayTec’s 21st in-situ seminar at ICMOVPE XVIII
• Analysis of quaternary films at the nanometer scale with EpiNet 2016
• In-situ lattice match sensing with XRD resolution by EpiCurve^® TT Gen3

Newsletter June 28, 2016

• First order for EpiTT/VCSEL confirmed by a lead user
• EpiTT for UV-C LEDs: 280 nm reflectance senses AlGaN surface morphology
• EpiCurve®TT Gen3: high resolution wafer bow measurements for CCS reactors
• AIXTRON qualifies LayTec EpiNet 2016 software

Newsletter June 14, 2016

• IQE equips complete fab with LayTec tools for MOCVD process monitoring
• Pyro 400 Gen3 ECP – emissivity corrected GaN temperature
• AbsoluT 400 calibration to the PTB certified wafer temperature

Newsletter April 21, 2016

• EpiNet-SECS/GEM
• Advanced process control with LayTec in-situ metrology at Jenoptik Diode Lab
• EpiTT Gen3: XRD referenced nk database for InP and related materials

Newsletter March 1, 2016

• Accurate wafer temperature for GaN/Si power electronics with Pyro 400

Newsletter February 16, 2016

• Gen3: new features of the next in-situ generation
• UV LEDs: accurate temperature for pss and double-side polished sapphire
• Overcoming the wafer-showerhead gap variation in UV LED epitaxy

Newsletter November 30, 2015 

• In-situ power for competitive electronic devices
• Expanded nk database and advanced analysis for GaN/SiC-4H HEMTs
• Crack-free GaN-on-Si HEMTs at Mitsubishi Electric Corp.
  
  

Newsletter October 22, 2015

• 3^rd generation of in-situ tools with advanced capabilities for UV LED processes
• Advanced 405 nm reflectance analysis for  AlN buffer optimization in UV LEDs
• Two step growth of low-defect-density templates for UV LEDs with EpiTT Gen3

Newsletter September 10, 2015

• REC’s integration of X Link in solar panel manufacturing process
• Hanwha Q CELLS’ evaluation of LayTec’s gel content measurement method for PV panel mass production
• Repeated orders from China
  
  

Newsletter August 20, 2015

• Improved nk data base for III-Nitrides in EpiNet 2015 release
• Process development on 100 mm (11-22) GaN / r-PSS
• New EpiCurve® TT for large single-wafers in D125 high-speed rotation reactor

Newsletter June 18, 2015

• EpiTT in GaAs wafer foundry: fast recalibration of GaAs/AlGaAs MOCVD
• Speeding-up the R&D for GaN-epi on (WS₂, MoS₂) 2D substrates
• EpiCurve® TT at Emcore D180 for BluGlass’ remote plasma CVD

Newsletter March 12, 2015

• MBE growth and reactive ion-etching of AlGaAs: latest in-situ results with EpiRAS® TT
• In-situ photo-luminescence of growing III-Nitride LED structures
• LayTec contributes to ‘InteGreat’ – R&D consortium led by OSRAM

Newsletter January 15, 2015

• ICP etching in a Sentech SI 500 tool monitored by EpiCurve®
• Optimization of Evatec’s plasma assisted evaporation
• Monitoring of SiO2/SiNx deposition in a Oxford Instruments ICP CVD tool

Newsletter November 13, 2014 

• Physics Nobel Prize 2014 – LayTec congratulates
• LayTec in-situ metrology in AIXTRON’s latest AIX R6 HB-LED reactor
• Translucent: EpiCurve® TT supports novel III-N/Si structures

Newsletter June 30, 2014

• Faster up-ramping after GaAs MOCVD maintenance
• InAlN DBR back-reflectors taken under tight control
• Jsun – our sales and service partner for PV in China

Newsletter February 27, 2014

• In-situ metrology for graphene growth
• Crack free a-plane GaN layers with EpiCurve® TT AR

LayTec AG  |  Seesener Str. 10-13  |  10709 Berlin, Germany  |  Tel.: +49 (0)30 89 00 55-0   |  Fax: +49 (0)30 89 00 55-180  |  Email: info@laytec.de | LinkedIn