- In-situ metrology enabling InP-based MOCVD on Si / SiO2 substrates for silicon photonics
- Short wavelength (280 nm) reflectance enables quantitative analysis of UV LED growth
- DBRs for VCSELs and SESAMs: combining in-situ and ex-situ metrology
Newsletter for PV market, August 2016
- LayTec’s latest development LID Scope has been successfully launched on the PV market to control the effect of Light Induced Degradation in solar cells.
- REC installed X Link SAM for PV module lamination control.
- New calibration tool X Cal secures tool-to-tool and fab-to-fab accuracy of X Link for the best possible lamination control.
- In-situ power for competitive electronic devices
- Expanded nk database and advanced analysis for GaN/SiC-4H HEMTs
- Crack-free GaN-on-Si HEMTs at Mitsubishi Electric Corp.
- 3rd generation of in-situ tools with advanced capabilities for UV LED processes
- Advanced 405 nm reflectance analysis for AlN buffer optimization in UV LEDs
- Two step growth of low-defect-density templates for UV LEDs with EpiTT Gen3
- REC’s integration of X Link in solar panel manufacturing process
- Hanwha Q CELLS’ evaluation of LayTec’s gel content measurement method for PV panel mass production
- Repeated orders from China
- Improved nk data base for III-Nitrides in EpiNet 2015 release
- Process development on 100 mm (11-22) GaN / r-PSS
- New EpiCurve® TT for large single-wafers in D125 high-speed rotation reactor
- EpiTT in GaAs wafer foundry: fast recalibration of GaAs/AlGaAs MOCVD
- Speeding-up the R&D for GaN-epi on (WS2, MoS2) 2D substrates
- EpiCurve® TT at Emcore D180 for BluGlass’ remote plasma CVD
- MBE growth and reactive ion-etching of AlGaAs: latest in-situ results with EpiRAS® TT
- In-situ photo-luminescence of growing III-Nitride LED structures
- LayTec contributes to ‘InteGreat’ – R&D consortium led by OSRAM
- ICP etching in a Sentech SI 500 tool monitored by EpiCurve®
- Optimization of Evatec’s plasma assisted evaporation
- Monitoring of SiO2/SiNx deposition in a Oxford Instruments ICP CVD tool
- Physics Nobel Prize 2014 – LayTec congratulates
- LayTec in-situ metrology in AIXTRON’s latest AIX R6 HB-LED reactor
- Translucent: EpiCurve® TT supports novel III-N/Si structures
- Faster up-ramping after GaAs MOCVD maintenance
- InAlN DBR back-reflectors taken under tight control
- Jsun – our sales and service partner for PV in China
