EpiTT 結合溫度和三種波長反射率的量測於一身。

我們以發射率校正測溫法量測實際溫度。發射率校正測溫法可以精準傳送 950 奈米不透明材料(矽、砷化鎵、磷化銦)的表面溫度。對於 950 奈米透明材料(氮化鎵、藍寶石、碳化矽),EpiTT 測量載體的頂側溫度。測量三種波長的反射率可監控成長薄膜層的所有重要屬性,如成長速度、膜厚度、化學計量的變化和形態。

EpiTT提供各種磊晶成長系統之業界標準量測工具,且與 0-1500 rpm(每分鐘旋轉速度)範圍內各主要旋轉頻率相容。

LayTec‘s EpiTT FaceT for GaAs laser facet coating is an in-situ spectroscopic metrology tool especially designed for accurate temperature measurement during MBE passivation of GaAs laser facets in conjunction with real-time sensing of the passivation layer thickness.
The laser stack temperature can be determined both during cleaning and passivation in a range from room temperature up to 400 °C.
EpiTT FaceT facilitates the real-time determination of the passivation layer thickness in a typical range from 0 - 30 nm.

 

LayTec has customized and expanded EpiTT's performance for VCSEL epitaxy: The new EpiTT VCSEL combines spectral reflectance measurements with the robust and industry proven EpiTT performance. EpiTT VCSEL contains two fiber optical heads: one for a standard EpiTT and one for spectral reflectance sensing. ...more

 

LayTec 提供 EpiTT 產品系列中的多頭配置工具,其專門設計用於多晶圓環反應器。這些型號備有兩個(EpiTwin TT)或三個(EpiTriple TT)光學頭,可用於測量不同位置溫度及其反射率。幾乎所有 LayTec EpiTT 工具都可以升級成多頭系統。

 

EpiCurve® TT 產品系列都包含發射率校正溫度監控和三波長反射率量測。針對配置多晶圓環的反應器,有兩個或三個 EpiTT 頭(EpiCurve®Twin TT 和 EpiCurve®Triple TT)的型號可以分別在兩到三個不同位置測量溫度和反射率。

 

對於包含 EpiTT 光學頭的系統,Laytec 提供獨特的溫度校準工具 AbsoluT。AbsoluT為小型手持裝置,將相同的絕對溫度參考點設定在各 EpiTT 、不同晶圓環、不同反應器和不同批次進行測量,達到精準的環對環、反應器對反應器和批次間的溫度校準。    ... 更多  ... more ###NOHIDE###

 

所有 LayTec 即時系統皆具備 LayTec 專門為製程最佳化、分析和控制所開發的軟體。我們的軟體解決方案可以在 MOCVD 晶圓廠控制多個系統,同時監控所有批次運行,並在依據先進製程控制(Advanced Process Control,APC)支援作業員決定”停線與否”。   ... 更多.   ... more

 

To monitor precisely both AlGaN growth rate and surface morphology during UV-C LED epitaxy, LayTec offers an additional 280 nm reflectance channel that employs a UV-C LED as a light source. Learn more on our UV LED page of the website

 

所有 EpiTT 產品系列(EpiTT、EpiTwin TT 和  EpiTriple TT)皆適用於各種 MOCVD 成長系統,包括:

• 具備衛星旋轉的系統

• 類面沉積系統

• 主要基座轉速高達 1500 rpm 的系統

• 研發型和客製 MOCVD 成長系統

 

Complex multilayer structures are the backbone of logic and memory devices manufactured nowadays by semiconductor industry. EpiTT UV is the tool of choice for monitoring the growth of complex multilayer stacks in plasma-enhanced chemical vapor deposition (PECVD), atomic layer deposition (ALD) as well as epitaxial methods. ...more

 

LayTec 的感測器可相容於 Riber、Veeco、DCA 和 VG 的 MBE 系統。用於其他製造商產品和客製系統,可視需求提供。瀏覽我們的應用須知深入瞭解:

 

在 HVPE 應用中,EpiTT 控制

  • 表面粗糙度
  • 初始10 µm 的成長速度確認
  • 950 nm 的反射率和測溫

瀏覽我們的應用須知或聯繫 info@laytec.de 以取得更多資訊。

 

Product information

Fields of application

  • GaN LED and laser diode production
  • GaAs/AlGaInP/InP laser diode production
  • Triple-junction solar cell production on GaAs, Ge, Si
  • SiC for power electronics
  • R&D for new materials and devices

Product features

Emissivity Corrected Pyrometry:

  • Temperature range: T=450°C to 1300°C for large viewport systems / T=500°C to 1400°C  for narrow viewport systems / other temperature ranges on request, e.g. 1500°C for UV LED applications, 1700°C for SiC
  • Accuracy better than 1 K
  • Wafer and area selective measurements
  • True wafer temperature for opaque semiconductors such as InP, Graphite (SbS)
  • Pocket temperature for GaN, Sapphire and SiC


Reflectance at three wavelengths:

  • 950 nm, 633 nm and 405 nm
  • Growth rate, layer thickness, roughness and other layer qualities


Full performance up to 1500 rpm main susceptor rotation!

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