Particularly during MOCVD, with long run times and multiple layers being grown on multiple wafers, real time feedback is a very important tool for increasing yield. The most prominent example in support of real time feedback is control of pocket and wafer temperatures using the in-situ data.
On AIXTRON MOCVD systems, “auto sat” is a feature that allows for the eliminatation of temperature differences between individual pockets and wafers by tuning the gas foil rotation flow. Based on the EpiTT, EpiCurve® TT or Pyro 400 temperature, the wafer or pocket temperatures are measured during the run, triggered by the recipe. Detected temperature differences are then minimized by variation of the gas flow, as the flow rate changes the thermal coupling of the pocket to the susceptor.
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