In-situ solutions for epitaxy: MOVPE, MBE and HVPE
Epitaxy is a technology for growing crystalline thin films on crystalline substrates. Because epitaxy usually has to be controlled at a high level of atomic monolayers, in-situ metrology is indispensable for optimizing material quality and obtaining run-to-run reproducibility in opto-electronic and electronic applications. As a market leader in compound semiconductor epitaxial growth monitoring, LayTec provides in-situ solutions for a variety of epitaxial processes.
HVPE (Hydride vapor phase epitaxy) is an epitaxial method for the production of compound semiconductor materials that offers a high growth rate and a controlled geometrical size. This technique is used for growing GaN substrates on GaN/sapphire templates. ###HIDE### It is well known that tight growth monitoring is indispensable during HVPE growth. For HVPE applications, LayTec offers:
- EpiTT, which monitors surface roughness, growth rate of the first 10 µm, reflectance and pyrometry at 950 nm. Please learn more about EpiTT for HVPE applications in our Application note
- EpiCurve® TT, which contains all features of EpiTT and monitors additionally the bowing. Find out more about strain engineering for HVPE GaN growth in our Newsletter
Please contact firstname.lastname@example.org for further information.