A nagging problem in today’s GaN-based LED production is the inability to measure and control the real GaN surface temperature during epitaxial growth on sapphire or SiC. LayTec offers a solution with Pyro 400, which provides precise real surface temperature measurements of GaN on sapphire and of SiC, and enables direct growth control of InGaN MQW layers.
All LayTec in-situ systems are equipped with LayTec software specially developed for process optimization, analysis and control. Our software solutions can be integrated into the whole fab to monitor all runs simultaneously and support operators making “stop or go” decisions. ... more
• GaN LED and laser diode production
• III-Nitride growth on sapphire
• SiC growth
• R&D for new materials and devices
and many others