Pyro 400: Direct access to GaN and SiC temperature

LayTec offers an ultimate solution for GaN-based LED production: the Pyro 400 metrology system. It  provides precise real surface temperature measurements during epitaxial growth of GaN on sapphire or SiC, and enables direct growth control of InGaN multiple quantum well (MQW) layers. While conventional pyrometers measure pocket temperature instead of wafer temperature, Pyro 400 provides both ultraviolet (UV) pyrometry for direct GaN surface temperature control and, additionally, infrared (IR) pyrometry for pocket temperature.

Following  Pyro 400’s track record of  securing top production yields fab-wide at leading HB-LED manufacturers, we have launched the next generation: Pyro 400 Gen 2.   ...more


LayTec's latest development Pyro 400 Gen3 comes to the market with its own calibration tool: AbsouT 400. ...more


The combination of Pyro 400 and EpiCurve® TT provides you with all real-time growth parameters and the best control of LED growth in MOCVD.    ... more about EpiCurve® TT


All LayTec in-situ systems are equipped with LayTec software specially developed for process optimization, analysis and control. Our software solutions can be integrated into the whole fab to monitor all runs simultaneously and support operators making “stop or go” decisions. ... more


Product information

Fields of application:

• GaN LED and laser diode production
• III-Nitride growth on sapphire
• SiC growth
• R&D for new materials and devices
and many others

Product features:

  • Ultraviolet (UV) pyrometry for direct GaN surface temperature control
  • Strict LED emission wavelength uniformity control
  • Automated correction of viewport coating effects to enable long-lasting, 24/7 accuracy in HB-LED emission wavelength
  • Additional infrared (IR) pyrometry for pocket temperature
  • Full performance up to 1500 rpm main susceptor rotation

Product news: