In-situ control for next generation logic and memory devices

MEMSPractically all modern electronic devices rely on electronic circuits consisting of thin film structures of increasing complexity. These devices are currently facing two main challenges:

  • Reduction of physical dimensions, e.g. latest logic and memory devices: "More Moore"
  • Addition of new functionalities, e.g. microelectromechanical systems (MEMS): "More than Moore"

Nowadays, size reduction is approaching its physical limitations. Therefore, even more complex multilayer structures are currently introduced in semiconductor manufacturing in order to overcome or avoid these limitations. Two prominent examples are next generation solid state memories and planar optical MEMS.

Why in-situ monitoring?

The complexity of such devices requires entirely new methods of process control for various reasons:

  • Post-process metrology applied to dedicated test fields on the wafer cannot resolve the properties of these 3D structures with sufficient precision.
  • The deposition time of these multilayer structures is significantly longer than for single layers. Hence, real-time feedback is needed in order to avoid unproductive deposition time due to process deviations.

Therefore, in-situ metrology is indispensable to meet both quality and cost targets for the next generation of devices. LayTec’s EpiTT UV tools is successfully applied to monitoring the growth of complex multilayer stacks in plasma-enhanced chemical vapor deposition (PECVD), atomic layer deposition (ALD) as well as epitaxial methods. Find out more in our application note or contact info@laytec.de for further information.