In-situ solutions for epitaxy: MOVPE, MBE and HVPE

Epitaxy is a technology for growing crystalline thin films on crystalline substrates. Because epitaxy usually has to be controlled at a high level of atomic monolayers, in-situ metrology is indispensable for optimizing material quality and obtaining run-to-run reproducibility in opto-electronic and electronic applications. As a market leader in compound semiconductor epitaxial growth monitoring, LayTec provides in-situ solutions for a variety of epitaxial processes.

MOVPE is also known as Metalorganic chemical vapor deposition (MOCVD) or Organometallic vapor phase epitaxy (OMVPE). LayTec in-situ metrology systems are available for various MOCVD growth systems such as: ###HIDE###

  • Systems with combined main rotation and satellite rotation (reactors of Planetary® type)
  • Showerhead-like systems
  • Systems with wafer rotation speed of up to 1500 rpm
  • R&D type and customized MOCVD growth systems

These products are available for MOCVD process monitoring:


LayTec’s sensors are adaptable to many MBE (Molecular Beam Epitaxy) systems by Riber, Veeco, DCA and VG. Adaptation to other manufacturers’ products and custom-built systems is available on request. The following products are available for MBE process monitoring:###HIDE###


HVPE (Hydride vapor phase epitaxy) is an epitaxial method for the production of compound semiconductor materials that offers a high growth rate and a controlled geometrical size. This technique is used for growing GaN substrates on GaN/sapphire templates. ###HIDE### It is well known that tight growth monitoring is indispensable during HVPE growth. For HVPE applications, LayTec offers:

  • EpiTT, which monitors surface roughness, growth rate of the first 10 µm, reflectance and pyrometry at 950 nm. Please learn more about EpiTT for HVPE applications in our Application note
  • EpiCurve® TT, which contains all features of EpiTT and monitors additionally the bowing. Find out more about strain engineering for HVPE GaN growth in our Newsletter

Please contact for further information.