LayTec and its customers are glad to share their experience with you

Once or twice a year LayTec holds an in-situ seminars where our customers present their measurement results and LayTec staff discuss new developments. Here you will find some of the presentations.

 

N-based materials

Combined use of in-situ curvature and full wafer temperature profile measurements for GaN growth on 6-inch Si substrates (Dandan Zhu, University of Cambridge, UK)

Reproducible growth of InGaNMQWs emitting in the near UV by means of feedback in-situ temperature control (Arne Knauer, Ferdinand-Braun-Institut Berlin, Germany)

High resolution curvature measurements of InAlGaN MQWs for near UV LED optimization (Dr. Arne Knauer, Ferdinand-Braun-Institute Berlin, Germany)

Growth of high quality GaN on Silicon by MBE (Dr. Yvonne Cordier of CRHEA-CNRS, France)

Morphology development of GaN grown with different carrier gases (Yong Suk Cho of the Research Center Juelich, Germany)

EpiCurve TT at production line TSSEL reactor for GaN/Si (Armin Dadgar, AZZURRO AG, Germany)

In-situ monitoring of AlGaN/GaN/AlN growth using LayTec's EpiTT sensor (Prof. Russel Dupuis, Georgia Institute of Technology, USA)

HEMT structures

Growth monitoring of AlInN-based heterostructures (AlInN/GaN, AlInN/AlN) (Christoph Mauder, RWTH Aachen, Germany)

Please find further talks in the report about our last in-situ seminar >>

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