LayTec and its customers are glad to share their experience with you

Once or twice a year LayTec holds an in-situ seminars where our customers present their measurement results and LayTec staff discuss new developments. Here you will find some of the presentations.

 

N-based materials

Combined use of in-situ curvature and full wafer temperature profile measurements for GaN growth on 6-inch Si substrates (Dandan Zhu, University of Cambridge, UK)

Reproducible growth of InGaNMQWs emitting in the near UV by means of feedback in-situ temperature control (Arne Knauer, Ferdinand-Braun-Institut Berlin, Germany)

High resolution curvature measurements of InAlGaN MQWs for near UV LED optimization (Dr. Arne Knauer, Ferdinand-Braun-Institute Berlin, Germany)

Growth of high quality GaN on Silicon by MBE (Dr. Yvonne Cordier of CRHEA-CNRS, France)

Morphology development of GaN grown with different carrier gases (Yong Suk Cho of the Research Center Juelich, Germany)

EpiCurve TT at production line TSSEL reactor for GaN/Si (Armin Dadgar, AZZURRO AG, Germany)

In-situ monitoring of AlGaN/GaN/AlN growth using LayTec's EpiTT sensor (Prof. Russel Dupuis, Georgia Institute of Technology, USA)

GaAs and InP based materials

RAS monitoring of formation and capping process of InAs/GaAs QDs (A. Hospodková, Institute of Physics AS CR, Prague, Czech Republic)

InGaAs/GaAsSb and GaAsSb/InP interface studies (Ulf Seidel, Hahn-Meitner-Institute Berlin, Germany)

In-situ curvature measurements on GaAs based materials: In-composition measurements for AlGaInP / GaAs and strained InGaAs-QWs (Dr. Martin Zorn, Ferdinand Braun Institute, Germany)

Determination of Al-content in AlGaInP by in situ reflectance sensor EpiR MF (Robert Rossbach of Stuttgart University, Germany)

In-situ monitoring of InGaAsN MQW structures (Dr. Outi Reentilä of Micronova, Helsinki University of Technology, Finland)

Quantum dot formations

Using a three head LayTec detector system on a 6x2 Thomas Swan MOCVD reactor (Dr. Antony Springthorpe, National Research Council of Canada)

In-situ process control for demanding quantum dot devices (Tim David Germann, Technical University of Berlin, Germany)

Laser heterostructures

EpiRAS TT for in-situ monitoring of InP based material growth (Jean Décobert, Alcatel Thales III-V Lab, France)

HEMT structures

Monitoring applications of EpiRAS in the growth of DHBTs and HEMTs (Olivier Ostinelli, ETH Zurich, Switzerland)

Growth monitoring of AlInN-based heterostructures (AlInN/GaN, AlInN/AlN) (Christoph Mauder, RWTH Aachen, Germany)

Please find further talks in the report about our last in-situ seminar >>

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