The EpiRAS is a multi-purpose in-situ monitor for epitaxial growth of cubic semiconductors. The system is based on two spectroscopic optical techniques: Reflectance Anisotropy Spectroscopy (RAS) and reflectance spectroscopy (R). It can be combined with an internal temperature module for emissivity corrected pyrometry measurements (TT option).

For further details see:

• EpiRAS^®TT datasheet
• related application notes