LayTec provides tools for a variety of processes related with heterojunction bipolar transistors (HBTs) and high electron mobility transistors (HEMTs), both in MOCVD and MBE deposition systems.
Our systems measure epitaxy growth properties – wafer temperature, wafer bowing, growth rate, layer thickness, doping levels, ternary material composition and surface roughness – with an extreme precision already during the deposition process!