Take advantage of LayTec’s experience and know-how
In the application notes below you will find detailed information about particular applications.
Application examples
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Blue LEDs and lasers (N-based materials)
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Pyro 400 for real GaN surface temperature
EpiCurve® TT: GaN LED growth optimisation with LayTec’s new bowing sensor
EpiTT 405: InGaN MQW monitoring in GaN LED production
EpiTwin TT - in-situ sensor for multi-wafer multi-ring MOCVD application
Feedback control of GaN layer thickness by EpiTT
EpiTT goes GaN MBE!
GaN growth monitored with EpiR in CCS reactors
GaN/Si growth monitored with EpiR
In-situ determination of AlxGa1-xN composition
Carrier gas effects on GaN morphology and nucleation -
Red LEDs and lasers (As and P based materials)
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InGaAsN: In and N content measurements by EpiTT
In-situ control of InGaAs on GaAs in MOVPE by high resolution EpiCurve® TT sensor
In-situ curvature measurements in MBE
EpiRAS®IR TT in-situ sensor for GaAs based DBR growth monitoring in MBE
In-situ measurements in AIX 200/4 MOCVD system on a 3x2” configuration
Real-Time control and optimization of quantum dot laser and VCSEL growth with EpiRAS®IR TT
In-situ composition determination during AlGaInP growth in MOVPE
True wafer temperature measurements in MBE -
Infra-red lasers and electronics
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InGaAsN: In and N content measurements by EpiTT
InGaAs/GaAs Quantum Dot formation processes monitored with LayTec’s EpiRAS®
MOVPE growth of GaInNAs/GaAs QW using Reflectance Anisotropy Spectroscopy (RAS)
Homoepitaxial growth rate analysis for InP/InP (doped)
In-situ techniques for process calibration of InP based device structures
Processes
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MOCVD
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In-situ control of InGaAs on GaAs in MOVPE by high resolution EpiCurve®TT
In-situ measurements in AIX 200/4 MOCVD system on a 3x2” configuration
GaN growth monitored with EpiR in AIXTRON CCS reactors
Influence of satellite rotation frequency on true wafer temperature in planetary MOCVD reactor
Rotation monitoring in AIX 200 and AIX 200/4 reactors by EpiRAS®TT
MOVPE growth of GaInNAs/GaAs QW using Reflectance Anisotropy Spectroscopy (RAS)
In-situ composition determination during AlGaInP growth in MOVPE
Rotation monitoring in AIX 200 and AIX 200/4 Reactors by EpiRAS®TT -
MBE
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HVPE
Products
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Pyro 400
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AbsoluT
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EpiTT / EpiTwin TT
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EpiTT 405: InGaN MQW monitoring in GaN LED production
EpiTwin TT – in-situ sensor for multi-wafer multi-ring MOCVD application
EpiTT: LayTec’s solution for LED production
True wafer temperature measurements in MBE
TT measurements: double side polished vs. single side polished sapphire substrates
Feedback control of GaN layer thickness by EpiTT
Homoepitaxial growth rate analysis for InP/InP (doped)
EpiTT goes GaN MBE
InGaAsN: In and N content measurements by EpiTT
HVPE growth of bulk GaN controlled by EpiTT 3λ -
EpiCurve TT
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EpiR TT
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EpiRAS TT
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In-situ measurements in AIX 200/4 MOCVD system on a 3x2” configuration
Influence of satellite rotation frequency on true wafer temperature in planetary MOCVD reactor
±1K real-time true wafer temperature measurement with EpiRAS®TT
EpiRAS®IR TT in-situ sensor for GaAs based DBR growth monitoring in MBE
InGaAs/GaAs Quantum Dot formation processes monitored with LayTec's EpiRAS®
Real-time control and optimization of quantum dot laser and VCSEL growth with EpiRAS®IR
Rotation monitoring in AIX 200 and AIX 200/4 reactors by EpiRAS®TT
MOVPE growth of GaInNAs/GaAs quantum wells monitored by Reflectance Anisotropy Spectroscopy (RAS)
In-situ composition determination during AlGaInP growth in MOVPE
In-situ techniques for process calibration of InP based device structures