Take advantage of LayTec’s experience and know-how

In the application notes below you will find detailed information about particular applications.

Application examples

Blue LEDs and lasers (N-based materials)

Pyro 400 for real GaN surface temperature (English)

Pyro 400 for real GaN surface temperature (Korean)

GaN LED growth optimisation with EpiCurve®TT

InGaN MQW monitoring in GaN LED production with EpiTT 405 nm

EpiTwin TT - in-situ sensor for multi-wafer multi-ring MOCVD application

Feedback control of GaN layer thickness by EpiTT

EpiTT goes GaN MBE!

Red LEDs and lasers (As and P based materials)

InGaAsN: In and N content measurements by EpiTT

In-situ control of InGaAs on GaAs in MOVPE by EpiCurve® TT

In-situ wafer bowing control of MBE processes

True wafer temperature control of MBE processes

Infra-red lasers and electronics

InGaAsN: In and N content measurements by EpiTT

Homoepitaxial growth rate analysis for InP/InP (doped)

Processes

MOCVD

Pyro400 for real GaN surface temperature

GaN LED growth optimisation with EpiCurve®TT

InGaAsN: In and N content measurements by EpiTT

InGaN MQW monitoring in LED production with EpiTT

In-situ control of InGaAs on GaAs in MOVPE by EpiCurve®TT

Feedback control of GaN layer thickness by EpiTT

Homoepitaxial growth rate analysis for InP/InP (doped)



MBE

In-situ curvature measurements in MBE

True wafer temperature measurements in MBE 

EpiTT goes GaN MBE

MBE growth monitoring of thin Oxides/Si

HVPE

HVPE growth of bulk GaN controlled by EpiTT 3λ

Products

Pyro 400

Pyro 400 for real GaN surface temperature (English)

Pyro 400 (Korean)

AbsoluT

Precise on-site temperature calibration with AbsoluT

EpiTT / EpiTwin TT

EpiTT 405: InGaN MQW monitoring in GaN LED production

EpiTwin TT – in-situ sensor for multi-wafer multi-ring MOCVD application

True wafer temperature measurements in MBE

TT measurements: double side polished vs. single side polished sapphire substrates

Feedback control of GaN layer thickness by EpiTT

Homoepitaxial growth rate analysis for InP/InP (doped)

EpiTT goes GaN MBE

InGaAsN: In and N content measurements by EpiTT

HVPE growth of bulk GaN controlled by EpiTT 3λ

EpiCurve TT

Curvature measurements with EpiCurve®TT in CCS reactor systems

In-situ control of InGaAs on GaAs in MOVPE by high resolution EpiCurve®TT sensor

In-situ curvature measurements in MBE

GaN LED growth optimisation with EpiCurve®TT

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