Successful event: LayTec‘s III-As/P in-situ seminar at CS Week

On 22 May LayTec‘s 14th in-situ seminar was held in conjunction with the Compound Semiconductor Week 2011 (www.csw2011.org) in Berlin, Germany, with the topical focus on “In-situ monitoring of III-Arsenide and III-Phosphide epitaxial growth”. [more]

EpiRAS TT at work during MBE growth of AlAs/GaAs resonant-tunnel diodes (RTDs)

In a recent publication Igor Kazakov and co-workers of the Lebedev Physical Institute in Moscow published results on MBE growth of high-quality RTD structures. The team used LayTec‘s EpiRAS TT system for real-time monitoring of all stages of heterostructure growth with ultrathin GaAs and AlAs layers. [more]

LayTec thanks to the Japanese researchers and expresses its sympathy with the nation

For many years, our Japanese partners, customers and friends contributed to the progress in science and technology of compound semiconductors. Therefore now, after the earthquake, tsunami and the nuclear disaster we feel it is our duty to help: [more]

LayTec invites its users to in-situ seminars in 2011

This year LayTec holds two in-situ seminars with different topical focuses: in-situ monitoring of III-Arsenide and III-Phosphide epitaxial growth and in-situ control of III-Nitride epitaxial growth. [more]

Strain engineering controlled by EpiCurve®TT: GaN:Ge layers on silicon

GaN based epitaxy on silicon (Si) is very challenging because of the thermal mismatch between GaN and Si, which causes extreme tensile stress after cooling. For such applications LayTec‘s EpiCurve®TT is the tool of choice for a precise in-situstrain engineering. Prof. Alois Krost and his team at the Otto-von-Guericke University (OvG) in Magdeburg, Germany, applied the tool to develop a new strain [more]