LayTec‘s III-Nitride in-situ seminar in Glasgow

On July 10th the 15th LayTec in-situ seminar was held successfully in conjunction with the 9th ICNS conference (www.icns9.org) in Glasgow. [more]

Growth of deep UV LEDs

Dr. Tim Wernicke of TU Berlin explained how the combination of spectroscopic reflectance and wafer bow measurements in his EpiCurve®R TT metrology system enables the investigation and optimization of band gaps, layer thicknesses, surface morphology and defect densities in the complex InGaAlN material system. [more]

Wafer bow during GaN on Si growth on sapphire

Mr. Christoph Berger explained in his talk at the in-situ seminar in Glasgow how the researchers of the OvG University in Magdeburg use the EpiCurve® TT technology for developing optimized processes for III-N growth on silicon. [more]

EpiTT applied to MOVPE Growth of AlGaAs-based Laser Structures

Dr. Martin Zorn of JENOPTIK Diode Lab GmbH gave impressive insight in today’s production-line use of LayTec metrology systems for III/V-laser mass-production. [more]

In-situ curvature measurement for structural optimization of InGaAs/GaAsP quantum-well solar cells

Prof. Sugiyama of University of Tokyo reported on successful strain compensation of InGaAs/GaAsP multiple quantumwells (MQWs) in novel solar cells on GaAs. By carefully in-situ balancing the necessary phosphorus content in the GaAsP barriers (see Fig. 1) he and his coworkers managed to grow this new type of photovoltaic MQW absorber in an AIXTRON planetary reactor. [more]