In-situ curvature measurement for structural optimization of InGaAs/GaAsP quantum-well solar cells

Prof. Sugiyama of University of Tokyo reported on successful strain compensation of InGaAs/GaAsP multiple quantumwells (MQWs) in novel solar cells on GaAs. By carefully in-situ balancing the necessary phosphorus content in the GaAsP barriers (see Fig. 1) he and his coworkers managed to grow this new type of photovoltaic MQW absorber in an AIXTRON planetary reactor.

(Please find Fig. 1 in our newsletter)

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