Pyro 400: Real GaN Surface Temperature

A nagging problem in today’s GaN based LED production is the inability to measure and control the real wafer temperature during epitaxial growth. At the International Conference on Nitride Semiconductors (ICNS) in Korea on 18-23 October LayTec presented its latest product: Pyro 400. Unlike conventional infrared pyrometry, which can only detect the susceptor surface temperature under sapphire or SiC wafers, Pyro 400 is the first real solution for measuring the exact surface temperature of  GaN layers. The tool performs pyrometry at 400 nm. At this wavelength GaN emits light and makes it possible to measure its temperature.
At the ICNS Dr. Kolja Ha-berland of LayTec presented the results obtained during growth of GaN LED structures containing multi quantum wells (MQW). You will find more information and latest results in our latest newsletter >>